| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a photoelectric conversion device having proper spectral sensitivity characteristics and no variations in the output current, without causing contaminants to mix into a photoelectric conversion layer, and to obtain a highly reliable semiconductor device having a photoelectric conversion device. <P>SOLUTION: A semiconductor device comprises, on an insulating surface, a first electrode, a second electrode, a color filter between the first electrode and the second electrode, and an overcoat layer covering the color filter. The semiconductor device further comprises, on the overcoat layer, a photoelectric conversion layer having a p-type semiconductor film, an i-type semiconductor film, and an n-type semiconductor film; and one end portion of the photoelectric conversion layer is in contact with the first electrode, and an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
