| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution for metal prepared as condensate to be diluted when it is used by making it hard to generate the coagulation or precipitation of abrasive grains even in the case of preparing condensate containing abrasive grains, simplifying its handling, and preventing any slit-shaped excessive polishing from occuring at the end of the wiring section of a body to be polished when using the condensate by diluting it. <P>SOLUTION: This polishing solution for metal to be used for chemical/mechanical flattening to be executed in the manufacturing process of a semiconductor device contains oxidant, amino acid or amino polyacid, heterocyclic compound, at least one kind of compounds expressed by a formula (1): NR<SB>4</SB>OH (in this formula (1), R independently expresses an alkyl group whose carbon numbers are ranging from 1 to 4), abrasive grains, and water. In the case of using this polishing solution for metal for chemical/mechanical flattening, it is diluted by adding water or aqueous solution. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
