| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a reaction product from being deposited in a gap between a wafer stage and a focus ring when treating a substrate to be treated utilizing plasma discharge. SOLUTION: The semiconductor manufacturing apparatus is equipped with a chamber 1 capable of keeping a predetermined vacuum level, a wafer stage 3 supporting the substrate 2 to be treated in the chamber, a focus ring 5 arranged around the wafer stage, and a holding bed 6 keeping the wafer stage and the focus ring, and carries out the treatment for the substrate to be treated located on the wafer stage utilizing plasma discharge generated in the chamber. The holding bed has a gas discharge hole 9 which makes the gap between the wafer stage and focus ring communicate with the outside of the chamber and can discharge the reaction product 8 existing in the gap through the gas discharge hole to the outside of the chamber. COPYRIGHT: (C)2008,JPO&INPIT
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