| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for forming an electrically rewritable nonvolatile memory in a semiconductor memory of SOI structure. SOLUTION: The semiconductor memory comprises an SOI semiconductor substrate 1, an element-isolating layer 38, MOSFETs 8 formed in a transistor-forming region 10, and MOS capacitors 9 formed in a capacitor-forming region. The MOSFET 8 has a gate insulating film, a floating gate electrode 13 on a gate oxide film, a source layer 16, a drain layer 17, a high concentration diffusion layer 19 contacting a channel region, containing identical type impurity diffused at a high concentration as that of the impurity diffused in the channel region, and a silicide layer covering the high-concentration diffusion layer 19 and the source layer 16, and the MOS capacitor 9 has capacitor electrodes 21 having identical impurity diffused at a high concentration as that in the source layer 16, and the capacitor electrodes 21 are arranged facing, sandwiching the gate insulating film at the ends of the floating gate electrode 13 of the MOSFET. COPYRIGHT: (C)2008,JPO&INPIT
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