| 摘要 |
PROBLEM TO BE SOLVED: To easily form a fine impurity region; to eliminate a need of removing a film at every ion implantation; and to reduce man-hours in a method of manufacturing a semiconductor device, which method comprises a process for forming the impurity region with ion implantation. SOLUTION: The method of manufacturing the semiconductor device for selectively forming the impurity implantation region in a silicone substrate 10 by an ion implantation method is provided with a step of forming an ion implantation preventing material film 20 on the silicone substrate 10, a step of forming photoresist 14 on the ion implantation preventing material film 20, a step of patterning photoresist 14 so that an ion implantation part is opened, step of removing the material film 20 in the ion implantation part to film thickness suitable for ion implantation and a step of implanting ions in the silicone substrate 10 with photoresist 14 and the material film 20 as masks. COPYRIGHT: (C)2008,JPO&INPIT
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