| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a cubic single crystal silicon carbide substrate which consists of only silicon carbide, is self-supporting, has little defect and is excellent in crystallinity. SOLUTION: When starting to manufacture, a SOI substrate 1 comprising a silicon substrate 2, an embedded insulation film 3 and a surface silicon film 4 is prepared as a material. The surface silicon film 4 of the SOI substrate 1 is carbonized to transform into a single crystal silicon carbide film 5. A single crystal silicon carbide film 6 is formed on the film 5 by means of epitaxial growth. An amorphous silicon carbide film 7 is formed on the film 6 by means of vapor phase growth method. The silicon substrate 2 and the embedded insulation film 3 are removed. The substrate is heated to make the film 7 into a single crystal. Thus, a multilayer structure consisting of the single crystal silicon carbide films 5 and 6 and the single crystal silicon carbide film generated by making the amorphous silicon carbide film 7 into a single crystal is formed as the cubic single crystal silicon carbide substrate. COPYRIGHT: (C)2008,JPO&INPIT
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