| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device where deterioration of sensitivity of incident light due to thinning of a pixel size can be prevented; and to provide a manufacturing method of the element. SOLUTION: The solid-state imaging device includes: a semiconductor substrate; a photoelectric conversion element on the semiconductor substrate; a plurality of charge detection parts adjacent to the photoelectric conversion element; an interlayer dielectric having a first opening part opening an upper part of the photoelectric conversion element; a transfer transistor and wiring, which are arranged in the interlayer dielectric; a light shielding film having a second opening part opening an upper part of the photoelectric conversion element; a transparent material layer with which the first opening part and the second opening part are filled and which is arranged on the photoelectric conversion element comprising an upper part of the light shielding film; a micro lens arranged on the photoelectric conversion element through the transparent material layer and an optical buffer layer installed between the transparent material layer and the micro lens. In the optical buffer layer, a refractive index increases to an interface direction with the transparent material layer from an interface with the micro lens. COPYRIGHT: (C)2008,JPO&INPIT
|
