| 摘要 |
A through electrode that offers excellent performance and can be manufactured through a simple process is to be provided. In a silicon spacer including a silicon substrate, an insulative thick film is provided so as to be in contact with a surface of the silicon substrate and a side wall of a through hole penetrating the silicon substrate. An upper surface of a through plug is retreated to a lower level than an interface between the silicon substrate and the insulative thick film, thus to define a height gap. A first bump is then formed, which is connected to the retreated surface of the through plug and has a larger diameter than that of the through plug at the upper surface of the insulative thick film.
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