发明名称 Test operation of multi-port memory device
摘要 A multi-port memory device includes a plurality ports, a plurality of banks, a plurality of global data buses, first and second I/O controllers, and a test input/output (I/O) controller. The ports perform a serial I/O data transmission. The banks perform a parallel I/O data transmission with the ports. The global data buses are employed for transmitting data between the ports and the banks. The first I/O controller controls a serial data transmission between the ports and external devices. The second I/O controller controls a parallel data transmission between the ports and the global buses. The test I/O controller generates test commands based on a test command/address (C/A) inputted from the external devices and transmits a test I/O data with the global data bus during a test operation mode.
申请公布号 US2007245093(A1) 申请公布日期 2007.10.18
申请号 US20060647625 申请日期 2006.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 DO CHANG-HO;CHUNG JIN-IL
分类号 G06F12/00 主分类号 G06F12/00
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