| 摘要 |
An apparatus-testing mask and a method for calibrating essential parameters of exposure apparatuses on the optics principle base are provided. The mask includes a light-transparent substrate and calibration patterns disposed on the light-transparent substrate. Wherein, each of the calibration patterns includes a recognition pattern having symmetricity, a comparison pattern disposed around the recognition pattern and two pairs of calibration reticles disposed around the comparison pattern and extending along four directions (for example, 0°, 45°, 90° and 135°), respectively. By using the mask to calibrate the exposure apparatuses, the uptime of the exposure apparatuses is enhanced, the masks used for calibration are unified and some essential parameters of an exposure apparatus, such as focal length, skew degree and phase error are able to be calibrated using an auto-feedback system.
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