| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma film forming apparatus which can extremely reduce a frequency of cleaning when film formation is carried out repetitively for a long term of time, and can make a time itself required for one-time cleaning relatively small; and also to provide a method of cleaning the plasma film forming apparatus. <P>SOLUTION: A distance between an antenna element 32 and raw gas supply piping 34 is set to be smaller than the case when film formation is carried out by moving at least one of an antenna array 30 or the raw gas supply piping 34. Under this set condition, the interior is cleaned in a reacting vessel 14. <P>COPYRIGHT: (C)2008,JPO&INPIT |
