| 摘要 |
PROBLEM TO BE SOLVED: To provide a new impurity in which an impurity diffusion region is formed on a semiconductor substrate, while reducing the effect disturbing a crystal structure, without locally supplying energy more than is required, and which is injected into the semiconductor substrate to be used as a function region. SOLUTION: The activation of the impurity is performed by radiating an impurity injected semiconductor substrate 3 inserted into chambers 1 and 2 with an incoherent light using a flash lamp 8 for a short time. An element with a larger atomic radius compared with In, Si, or the like can be used as the impurity forming the impurity diffusion region in the semiconductor substrate. A flash lamp is used as the lamp irradiating incoherent light for short time. The flash lamp is Xe lamp, rare gas lamp, mercury lamp, hydrogen lamp or the like. Since incoherent light is used, the excessive intensity of energy, such as multiple photon process and interference, are eliminated. COPYRIGHT: (C)2008,JPO&INPIT
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