发明名称 SURFACE WAVE EXCITATION PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To improve film thickness distribution by allowing uniform in-plane distribution of material gas and discharge gas that is introduced in a chamber. SOLUTION: In the surface wave excitation plasma treatment device, micro waves are introduced into a chamber 2 through a dielectric member. A surface wave is formed from the micro waves. A discharge gas in the chamber is excited by the surface wave to generate surface wave excitation plasma which treats an object. It comprises a material gas introducing part 10 which introduces the material gas which is jetted into the chamber through a gas jetting opening, and a discharge gas introducing part 20 which introduces the discharge gas into the chamber. The material gas introducing part 10 comprises a plurality of gas jetting openings. The amount of drawn-out gas which is jetted into the chamber through the gas jetting opening is almost constant, and the amount of gas introduced into the chamber 2 from the discharge gas introducing part 20 is almost constant as well. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007273913(A) 申请公布日期 2007.10.18
申请号 JP20060101025 申请日期 2006.03.31
申请人 SHIMADZU CORP 发明人 NAKATSU OSAMU
分类号 H01L21/3065;C23C16/511;H01L21/205 主分类号 H01L21/3065
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