| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic induction-type transistor capable of efficiently contacting an n<SP>+</SP>type low resistance layer having a small contact area, reducing contact resistance of a source/gate contact portion, and repairing break in the pull-up line of the side of a recess portion. SOLUTION: A method of manufacturing the electrostatic induction-type transistor comprises the steps of forming a recess structure on an epitaxial growth layer to form a gate electrode; forming a source electrode on an opening of a dielectric of the epitaxial growth layer; and forming a drain electrode, on the opposite side of a semiconductor substrate. Furthermore, a step of providing a gate extracting metal electrode is provided, after interposing the steps of forming a polycrystalline silicon layer with lowered resistivity in the gate region by low-pressure chemical vapor deposition method; forming a gate electrode; and forming an accumulated oxide layer by the reduced pressure chemical vapor deposition method. A step of providing a source drawing metal electrode is also provided, after interposing the steps of forming the polycrystalline silicon layer with lowered resistivity in the source region by the reduced pressure chemical vapor deposition method, and forming a source electrode. COPYRIGHT: (C)2008,JPO&INPIT
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