| 摘要 |
PROBLEM TO BE SOLVED: To prevent abnormalities in transistor characteristics in a manufacturing method of a MOS semiconductor device which has three kinds of gate insulating films whose film thicknesses are different. SOLUTION: When forming a silicon oxide film 108 used as a first gate insulating film, a low leak MOSFET active region is covered with a protective insulating film 105. Then, the protective insulating film 105 on the low leak MOSFET active region is removed, and a second gate insulating film is formed on the low leak MOSFET active region. COPYRIGHT: (C)2008,JPO&INPIT
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