发明名称 Microelectromechanical device with integrated conductive shield
摘要 A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.
申请公布号 US2007243654(A1) 申请公布日期 2007.10.18
申请号 US20050237104 申请日期 2005.09.28
申请人 HONEYWELL INTERNATIONAL INC. 发明人 STRATTON THOMAS G.;GARDNER GARY R.;RAHN CURTIS H.
分类号 B81B7/02;H01L21/00;B81C1/00;G01L7/08;G01L9/00;G01L9/12;G01L19/06 主分类号 B81B7/02
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