发明名称 Level shifter for semiconductor memory device implemented with low-voltage transistors
摘要 A level shifter is proposed. The level shifter includes a stage having a first branch and a second branch, each branch including: a selection terminal for receiving a selection signal, the selection signal received by the first branch and the second branch being alternatively at a first voltage and at a second voltage higher than the first voltage in absolute value, a service terminal for receiving a third voltage higher than the second voltage in absolute value, an input circuit for coupling an intermediate node to the selection terminal when at the second voltage or for insulating the intermediate node from the selection terminal otherwise, an interface circuit for coupling an output terminal to the intermediate node when coupled or for insulating the output terminal from the intermediate node otherwise, and an output circuit for insulating the service terminal from the output terminal when coupled or for coupling the service terminal to the output terminal otherwise, the output terminals of the first branch and the second branch providing an output signal being alternatively at the second voltage or at the third voltage according to the selection signal.
申请公布号 US2007241804(A1) 申请公布日期 2007.10.18
申请号 US20070725988 申请日期 2007.03.19
申请人 STMICROELECTRONICS S.R.I. 发明人 CAMPARDO GIOVANNI;MICHELONI RINO
分类号 H03L5/00 主分类号 H03L5/00
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