发明名称 |
GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION |
摘要 |
<p>The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.</p> |
申请公布号 |
WO2007117576(A2) |
申请公布日期 |
2007.10.18 |
申请号 |
WO2007US08541 |
申请日期 |
2007.04.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ISHIKAWA, DAVID;METZNER, CRAIG, R.;ZOJAJI, ALI;KIM, YIHWAN;SAMOILOV, ARKADII, V. |
分类号 |
C30B23/00;C23C16/00;G06F11/00;G06F11/30;G06F12/16;G06F15/18;G08B23/00 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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