发明名称 |
Semiconductor device including nonvolatile memory and method for fabricating the same |
摘要 |
A semiconductor device including a nonvolatile memory and the fabrication method of the same is described formed on a semiconductor substrate. According to the semiconductor device, a second gate electrode film is used for a gate electrode film of a logic circuit, and for a control gate electrode film of a nonvolatile memory. As the second gate electrode film is formed at a relatively later step in fabrication, subsequent thermal process may be avoided. The gate structure is suitable for miniaturization of the transistor in the logic circuit.
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申请公布号 |
US7282413(B2) |
申请公布日期 |
2007.10.16 |
申请号 |
US20050318501 |
申请日期 |
2005.12.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKEBUCHI MASATAKA;ARAI FUMITAKA |
分类号 |
H01L21/8234;H01L21/8247;H01L27/088;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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