发明名称 Semiconductor memory device and signal processing system
摘要 A semiconductor memory device able to read out data at a high speed continuously, provided with, corresponding to a plurality of banks, current address registers for holding addresses for reading data of cell arrays, reserved address registers able to receive in advance and hold reserved addresses for next read operations from the outside, and bank control circuits for making the current address registers hold reserved addresses held in the reserved address registers, making the data be read out, and making the data latch circuits hold the data when the data read out from the cell arrays of the banks by addresses held in the current address registers and held in the data latch circuits become able to be transferred to the outside, and a signal processing system relating to the same.
申请公布号 US7283405(B2) 申请公布日期 2007.10.16
申请号 US20050126302 申请日期 2005.05.11
申请人 SONY CORPORATION 发明人 YAMANAKA HIDETOSHI;NISHIMURA TOSHIYUKI;ATSUMI SHIGERU;YOSHIOKA DAISUKE
分类号 G11C7/10;G11C8/06;G11C11/18;G11C11/4093;G11C16/04;G11C16/26 主分类号 G11C7/10
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