| 摘要 |
<p>A dielectric film wherein N in the state of an Si3=N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0. 1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N 2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH 3, Xe/NH3, Kr/NH3, Ar/N2/H 2, Xe/N2/H2and Kr/N2/H2.</p> |
