| 摘要 |
<p>A nonvolatile memory, a manufacturing method thereof, and a method for reading and writing on the memory are provided to double the amount of information accumulated per one unit cell of the nonvolatile memory from a conventional 2 values("0" and "1") to 4 values("0", "1", "2", "3", and "4"). A nonvolatile memory includes a memory cell to sustain data. The memory cell has a top electrode(3), a bottom electrode(4), and a phase change unit(8) capable of changing the state from the top electrode(3) to the bottom electrode(4) only once. The phase change unit(8) includes a first semiconductor layer(5) and a second semiconductor layer(6). The first semiconductor layer(5) is made of one semiconductor between P-type semiconductor or N type semiconductor. The second semiconductor layer(6) is made of the other type semiconductor formed by inserting the PN junction unit into each of top and bottom of the first semiconductor layer(5).</p> |
