METHOD OF FORMING A FIN FIELD EFFECT TRANSISTOR

摘要

A method of forming a fin field effect transistor is provided to improve the current driving capabilities of an NMOS field effect transistor and a PMOS field effect transistor independent of each other. A method of forming a fin field effect transistor includes the steps of: forming an active pin(102) on a semiconductor substrate(100); forming a gate crossing the active pin(102); forming a spacer(108) and a stress generation pattern(110) on both side surfaces of the gate and both side surfaces of the active pin(102); and forming a source/drain by injecting impurities below the surface of the active pin(102).