| 发明名称 |
Vertical conducting power semiconducting devices made by deep reactive ion etching |
| 摘要 |
The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching.
|
| 申请公布号 |
US7282753(B2) |
申请公布日期 |
2007.10.16 |
| 申请号 |
US20060534310 |
申请日期 |
2006.09.22 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
KUB FRANCIS J.;HOBART KARL D. |
| 分类号 |
H01L29/76;H01L21/331;H01L29/06;H01L29/417;H01L29/739;H01L29/78;H01L29/868;H01L29/872 |
主分类号 |
H01L29/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
