发明名称 |
Programmable multi-mode built-in self-test and self-repair structure for embedded memory arrays |
摘要 |
A built-in self-test and self-repair structure (BISR) of memory arrays embedded in an integrated device includes at least a test block (BIST) programmable to execute on a respective memory array of the device any of a certain number of test algorithms, and a self-repair block that includes a column address generator processing the faulty address information for allocating redundant resources of the tested memory array. The BISR may further include a redundancy register on which final redundancy information is loaded at each power-on of the device and control logic for managing data transfer from external circuitry to the built-in self-test and self-repair structure (BISR) and vice versa. The BIST structure serves any number of embedded memory arrays even of different types and sizes.
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申请公布号 |
US7284166(B2) |
申请公布日期 |
2007.10.16 |
申请号 |
US20050197989 |
申请日期 |
2005.08.05 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ZAPPA RITA;SELVA CAROLINA;RIMONDI DANILO;TORELLI COSIMO |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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