发明名称 |
Method for fabricating a film bulk acoustic resonator |
摘要 |
A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.
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申请公布号 |
US7281304(B2) |
申请公布日期 |
2007.10.16 |
申请号 |
US20040827532 |
申请日期 |
2004.04.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SANG-CHAE;SONG IN-SANG;HONG YOUNG-TACK |
分类号 |
H01L41/09;H04R17/00;H01L41/00;H01L41/02;H01L41/08;H01L41/18;H01L41/187;H01L41/22;H03H3/02;H03H3/04;H03H9/17 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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