发明名称 Method for fabricating a film bulk acoustic resonator
摘要 A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.
申请公布号 US7281304(B2) 申请公布日期 2007.10.16
申请号 US20040827532 申请日期 2004.04.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM SANG-CHAE;SONG IN-SANG;HONG YOUNG-TACK
分类号 H01L41/09;H04R17/00;H01L41/00;H01L41/02;H01L41/08;H01L41/18;H01L41/187;H01L41/22;H03H3/02;H03H3/04;H03H9/17 主分类号 H01L41/09
代理机构 代理人
主权项
地址