3-D transformer for high-frequency applications

摘要

A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors>60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6<k<0.9 may be created with very high self-resonance frequencies.