发明名称 Semiconductor device, manufacturing method and apparatus for the same
摘要 A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
申请公布号 US7282432(B2) 申请公布日期 2007.10.16
申请号 US20050144753 申请日期 2005.06.06
申请人 NEC CORPORATION 发明人 TAGO MASAMOTO;NISHIYAMA TOMOHIRO;TAO TETUYA;MIKAGI KAORU
分类号 H01L21/44;H01L21/60;H01L23/485 主分类号 H01L21/44
代理机构 代理人
主权项
地址