发明名称 |
Semiconductor device, manufacturing method and apparatus for the same |
摘要 |
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
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申请公布号 |
US7282432(B2) |
申请公布日期 |
2007.10.16 |
申请号 |
US20050144753 |
申请日期 |
2005.06.06 |
申请人 |
NEC CORPORATION |
发明人 |
TAGO MASAMOTO;NISHIYAMA TOMOHIRO;TAO TETUYA;MIKAGI KAORU |
分类号 |
H01L21/44;H01L21/60;H01L23/485 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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