| 摘要 |
A method for manufacturing a semiconductor device is provided to improve the reliability and yield of the semiconductor device by preventing the variation of electrical properties in a nickel silicide layer. A semiconductor wafer(SW) is stably loaded on a wafer stage(27a) in a first chamber. A reduction gas is supplied onto the wafer from an inner upper portion of the first chamber by using a shower head(27c). A dry cleaning process is performed on a main surface of the wafer. A first heat treatment is performed on the wafer at a first temperature, wherein the first temperature is obtained from a heating temperature of the shower head. The wafer is transferred from the first chamber to a second chamber. A second heat treatment is performed on the wafer in the second chamber at a second temperature. The second temperature is higher than the first temperature. The first temperature is in the range of 100 to 150 °C. The second temperature is in the range of 150 to 400 °C.
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