SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a fabricating method thereof are provided to improve dielectric breakdown voltage characteristic of the device by forming an ion implanted layer, apart from an element separating film and/or a contact plug, under a gate electrode. An isolation film defining a first active region(112e) and a second active region(112d) is formed on a semiconductor substrate. Gate dielectric patterns are formed on the first and second active regions. Gate electrodes(118d,118e) are formed on the gate dielectric patterns across the first and second active regions and the isolation film. An ion implanted layer(114d) for adjusting threshold voltage is formed on the substrate under the gate electrode in the second active region.