METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for reforming the surface of a film by the process for using hydrogen flame to especially make the formed film hydrophilic or water-repellent as required. SOLUTION: The surface of a first film 103 is reformed by providing a process with a heat source of flame of a gas burner 22 fueled by a mixed gas of hydrogen and oxygen to the first film 103 after forming the first film 103 on a substrate 100. Further specifically, a hydroxyl radical (OH*) in the flame makes the surface of the first film 103 hydrophilic. Or the product (for instance, CF3*) produced by the degradation of a fluorine compound by the flame makes the film 103 a water-repellent quality. COPYRIGHT: (C)2008,JPO&INPIT