发明名称 SUBSTRATE PROCESSING APPARATUS AND SIDEWALL PART
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus by which occurrence of abnormal electrical discharge and metallic contamination can be prevented. SOLUTION: The substrate processing apparatus 10 is provided with a deposition shield 43 as a sidewall part which is opposed to a process space S between a susceptor 12 and a gas introducing shower head 34 on the side wall 42 of a chamber 11. The deposition shield 43 has an upper electrode layer 44, a lower electrode layer 45, an insulator 46 of yttria which is shaped in such a way that it covers the upper electrode layer 44 and the lower electrode layer 45, an upper direct current power supply 47 which is connected with the upper electrode layer 44, and a lower direct current power supply 48 which is connected with the lower electrode layer 45. The insulator 46 is formed by flame spraying of yttria. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266296(A) 申请公布日期 2007.10.11
申请号 JP20060089164 申请日期 2006.03.28
申请人 TOKYO ELECTRON LTD 发明人 ENDO SHOSUKE;MORIYA TAKESHI;SHIMIZU AKITAKA
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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