| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of coping with miniaturization and in which a leakage current is suppressed. SOLUTION: The semiconductor device manufacturing method has a pillar forming step for forming a dummy pillar on a gate insulating film in a first conductive element forming region of a semiconductor substrate, a conductive-layer forming step for forming a conductive layer so as to cover the dummy pillar, an electrode forming step for forming an annular gate electrode around the dummy pillar by etching the conductive layer, a pillar removing step for removing the dummy pillar by etching, and an impurity dispersing step for forming second conductivity-type impurity dispersing regions respectively to the inside and the outside of the gate electrode in the element forming region. COPYRIGHT: (C)2008,JPO&INPIT
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