| 摘要 |
PROBLEM TO BE SOLVED: To remarkably reduce the occurrence of surface defect due to particles compared to a conventional technique by efficiently preventing particles from adhering on the surface of a bare silicon in an SIMOX (separation by implanted oxygen) process. SOLUTION: In manufacturing an SIMOX wafer having an oxygen implantation process and a high-temperature annealing process, prior to implantation of oxygen ions; an oxide film is formed on the surface of the wafer, and oxygen ion implantation is executed through the oxide film. COPYRIGHT: (C)2008,JPO&INPIT
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