发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A redundancy fuse is made up of a Cu-Al alloy film and a TiN film covering the surrounding surface of this Cu-Al alloy film. When this fuse is cut, the Cu-Al alloy film in the cut portion thermally diffuses by an abrupt temperature rise, and Al preferentially combines with oxygen because Al is baser than Cu. Al oxidizes in the atmosphere, and AlOx as the stable metal oxide produced sticks to the cut surfaces of the redundancy fuse to form a film in self-alignment. This film functions as a protective film to prevent the generation of corrosion.</p>
申请公布号 KR100765928(B1) 申请公布日期 2007.10.11
申请号 KR20010086000 申请日期 2001.12.27
申请人 发明人
分类号 H01L21/3205;H01L21/82;H01L23/52;H01L23/525 主分类号 H01L21/3205
代理机构 代理人
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