| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having improved heat radiation properties, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device 10 comprises: a semiconductor substrate 11, a heat sink (radiator) mounted on the upper surface (second main surface) of the semiconductor substrate 11, and wiring 14 or the like formed on the lower surface (first main surface) of the semiconductor substrate 11. The heat sink 17 is mounted on the upper surface of the semiconductor substrate 11, and its planar size is nearly the same as that of the semiconductor substrate 11. The heat sink 17 is as thick as 500μm-2 mm and may be formed thicker than the semiconductor substrate 11. By the reinforcement of the heat sink 17, the semiconductor substrate 11 can be made thin to, for example, approximately 50μm, thus thinning the entire semiconductor device 10. COPYRIGHT: (C)2008,JPO&INPIT |
