| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern thickening material etc., with which a resist pattern is thickened, a surface layer with superior etching resistance can be formed, and the pattern can be made fine. SOLUTION: The resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part and a crosslinking agent. The resist pattern has a surface layer on a resist pattern with etching rate (Ånm/s) ratio (internal layer/surface layer) of 1.1 or more under the same condition. The process for forming a resist pattern includes applying the thickening material after forming a resist pattern on its surface. The manufacturing process for the semiconductor has applying, after forming a resist pattern on an underlaying layer, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask. COPYRIGHT: (C)2008,JPO&INPIT
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