| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the degradation of the characteristics of a vertical type NPN transistor regarding a manufacturing method for a semiconductor device with a vertical type PNP transistor and the vertical type NPN transistor. SOLUTION: In the manufacturing method for the semiconductor device 10 having the vertical PNP transistor 15 with a first N-type buried diffusion layer 21, P-type diffusion layers 23 and 25 and a first N-type epitaxial growth layer 22, the vertical type NPN transistor 16 with a second N-type buried diffusion layer 40 and a second N-type epitaxial growth layer 41, the first and second N-type epitaxial growth layers 22 and 41 are formed after forming the first and second N-type buried diffusion layers 21 and 40, and the P-type diffusion layers 23 and 25 are formed after forming the first and second N-type epitaxial growth layers 22 and 41. COPYRIGHT: (C)2008,JPO&INPIT
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