| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SIMOX (separation by implanted oxygen) which can exactly control the thickness of an SOI film. SOLUTION: In manufacturing the SIMOX wafer, the SOI film having a thickness larger than a target SOI film thickness is formed in advance, and the final adjustment of the SOI film thickness is performed by an etching process provided differently from a cleaning process. COPYRIGHT: (C)2008,JPO&INPIT
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