发明名称 REFERENCE CURRENT GENERATING CIRCUIT OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 A reference current generating circuit has a plurality of current mirror circuits each having a mirror ratio different from another one, and generates a plurality of reference currents based on a current that flows to the reference memory cells. A plurality of sense amplifiers detects a current that flows to a selected memory cell based on the reference currents generated by the reference current generating circuit.
申请公布号 US2007236999(A1) 申请公布日期 2007.10.11
申请号 US20070763987 申请日期 2007.06.15
申请人 发明人 HONDA YOSUHIKO
分类号 G11C16/28 主分类号 G11C16/28
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