| 摘要 |
A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.
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