发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND SOURCE VOLTAGE/SUBSTRATE BIAS CONTROL CIRCUIT |
摘要 |
This disclosure concerns a semiconductor integrated circuit that includes a semiconductor substrate, a plurality of well regions formed on one surface of the semiconductor substrate and electrically isolated from each other, a plurality of MOS transistors formed in the well regions and a substrate bias generator that applies substrate biases to the individual well regions based on actually measured process-derived variance of the MOS transistors in threshold voltage to bring the threshold voltages of the respective MOS transistors into conformity with a normal threshold voltage.
|
申请公布号 |
US2007236276(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20070764605 |
申请日期 |
2007.06.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJITA TETSUYA;HAMADA MOTOTSUGU;HARA HIROYUKI |
分类号 |
H01L27/04;H01L29/94;G05F3/20;H01L21/822;H01L21/8238;H01L27/092;H03K3/01;H03K17/00 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|