| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with an element device of usable dimension smaller than the minimum production dimension by lithography. <P>SOLUTION: A semiconductor memory device according to one embodiment comprises a gate electrode formed on a semiconductor substrate via a gate insulator, a transistor with the gate electrode between a source and a drain which are opposed on the semiconductor substrate, an ferroelectric capacitor formed on the upper side of the transistor with a lower electrode, an ferroelectric film and an upper electrode, a first wiring electrically connected to the lower electrode and a second wiring electrically connected to the upper electrode. The ferroelectric capacitor functions as a displacement capacitor which comprises the respective upper electrodes in a way that they precisely overlap some of the lower electrodes. <P>COPYRIGHT: (C)2008,JPO&INPIT |
