| 发明名称 |
THIN-FILM CONTAINING IRON SILICIDE CRYSTAL AND MANUFACTURING METHOD FOR THE THIN FILM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film containing aβ-FeSi<SB>2</SB>crystal as a main phase and that can be applied to a device material over a wide range. <P>SOLUTION: The thin-film contains theβtype iron silicide crystal as the main phase. The thin-film further comprises Cu at a ratio, satisfying conditions represented by Formula (1): ACu/(AFe+ACu)≤0.30 (in the Formula (1), ACu represents the mol number of Cu and AFe the mol number of Fe configuring theβ-iron silicide crystal). <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2007266106(A) |
申请公布日期 |
2007.10.11 |
| 申请号 |
JP20060086098 |
申请日期 |
2006.03.27 |
| 申请人 |
JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
IHARA MANABU;TANAKA YUUJITSU |
| 分类号 |
H01L31/04;C30B13/22;H01L21/20;H01L21/208;H01L21/28 |
主分类号 |
H01L31/04 |
| 代理机构 |
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