| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve, for example, high brightness and efficiency of a light emitting device, and to achieve normally-off characteristics of a field effect transistor, by suppressing spontaneous polarization which occurs on a nitride semiconductor. <P>SOLUTION: A nitride semiconductor device includes a semiconductor laminate 110 made of a nitride semiconductor comprising a first main surface and a second main surface that faces it, and containing a channel layer 104. On the first main surface, a plurality of rough parts each having a plane orientation of ä0001} are formed, and the second main surface has a plane orientation of ä1-101}. The channel layer 104 is formed along ä1-101} in plane orientation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
