METHOD FOR RESTORING DAMAGE OF LOW DIELECTRIC-CONSTANT FILM, PRODUCTION DEVICE FOR SEMICONDUCTOR, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To restore a damaged layer detaching a C element by an etching and an ashing by a plasma in a substrate laminating an insulating film such as an SiOCH film consisting of a low dielectric-constant film containing silicon, carbon, oxygen and hydrogen. SOLUTION: A C8H18O2 (structural formula: (CH3)3COOC(CH3)3) gas is pyrolyzed and a CH3 radical is generated. The SiOCH film is supplied with the CH3 radical, and the CH3 radical is bonded with the damaged layer detaching the C element. COPYRIGHT: (C)2008,JPO&INPIT