| 摘要 |
PROBLEM TO BE SOLVED: To provide a signal transmission control device of a semiconductor memory device, capable of synchronizing the read signal output timing of a sense amplifier. SOLUTION: This device includes: a first reference voltage generation unit 130 for generating a first reference voltage; a second reference voltage generation unit 140 for generating a second reference voltage lower than the first reference voltage; a control signal generation unit 200 for outputting a clock signal to control a sense amplifier; a resistor unit 150 for outputting reference voltages of a plurality of different levels by being connected between the output ends of the first and second reference voltage generation units 130 and 140 via a plurality of connection nodes; and a plurality of sense amplifier driving units 160 to 190 for receiving the clock signal and the reference voltages, adjusting the output timing of the received clock signal by the reference voltages according to a distance from the control signal generation unit 200, and controlling the driving of the sense amplifier according to the adjusted clock signal. COPYRIGHT: (C)2008,JPO&INPIT
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