发明名称 DETECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a detection circuit in which desired RF-DC conversion characteristics can be achieved. SOLUTION: A Shottky diode 12 receives an RF signal through a varactor diode 16 and performs half-wave rectification to generate a detection voltage. Capacitance of the varactor diode 16 varies depending on the potential difference between a bias voltage applied to a port 19 and the detection voltage generated by the Shottky diode 12. When the input strength of the RF signal increases to raise the detection voltage, capacitance of the varactor diode 16 decreases and the impedance is increased. Consequently, through loss of the RF signal for the Shottky diode 12 increases to suppress detection voltage rise. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266758(A) 申请公布日期 2007.10.11
申请号 JP20060086291 申请日期 2006.03.27
申请人 NEC CORP 发明人 ITO SEIICHI
分类号 H03D1/00;H03G3/30 主分类号 H03D1/00
代理机构 代理人
主权项
地址