摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing residues from a substrate. SOLUTION: A method of using a post-etch treatment system for removing photoresist remnants and etch residues formed during an etching process is described. For example, the etch residues may contain a material including halogens. The post-etch treatment system comprises a vacuum chamber, a radical generation system connected to the vacuum chamber, a radical gas distribution system that is connected to the radical generation system and configured to distribute reactive radicals above a substrate, and a high-temperature pedestal configured to be connected to the vacuum chamber and to support the substrate. The method comprises a step of introducing a N<SB>x</SB>O<SB>y</SB>-based process gas into the radical generation system. COPYRIGHT: (C)2008,JPO&INPIT
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