| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method, plasma etching apparatus, computer storage medium, and storage medium with a treatment recipe stored thereon, in which the occurrence of roughness in the background film of a high fusing point metal film can be suppressed in comparison with the prior art. SOLUTION: A method of performing plasma etching, through a mask layer 103, on a high fusing point metal film 102 of a substrate 10 to be treated, includes: a first etching step of performing plasma etching during which an etching speed of a grain boundary is higher than an etching speed of grains, and a second etching step of performing plasma etching during which the selection ratio of the high fusing point metal film in an insulating film is higher than that of the first etching step. Prior to exposing an insulating film 101 in the grain boundary, switching is performed from the first etching step to the second etching step. COPYRIGHT: (C)2008,JPO&INPIT
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